Hund's rule Magnetism in C60 ions?

We investigate the occurrence of Hund's rule magnetism in C60(n+-) molecular ions, by computing the ground-state spin for all charge states n from -3 to +5. The two competing interactions, electron-vibration (e-v, including Jahn Teller, favoring low spin) and electron-electron (e-e, including Hund-rule exchange, favoring high spin), are accounted for based on previously computed ab-initio coupling parameters. Treating the ion coordinates as classical, we first calculate and classify the static Jahn-Teller distorted states for all n, inclusive of both e-v and e-e effects. We then correct the adiabatic result by including the zero-point energy lowering associated with softening of vibrations at the adiabatic Jahn-Teller minima. Our overall result is that while, like in previous investigations, low-spin states prevail in negative ions, Hund's rule high spin dominates all positive C60(n+) ions. This suggests also that Hund-rule magnetism could arise in fullerene cation-based solid state compounds, particularly those involving C60(2+).Comment: 12 pages, 2 figures, epj styl

Jahn-Teller Spectral Fingerprint in Molecular Photoemission: C60

The h_u hole spectral intensity for C60 -> C60+ molecular photoemission is calculated at finite temperature by a parameter-free Lanczos diagonalization of the electron-vibration Hamiltonian, including the full 8 H_g, 6 G_g, and 2 A_g mode couplings. The computed spectrum at 800 K is in striking agreement with gas-phase data. The energy separation of the first main shoulder from the main photoemission peak, 230 meV in C60, is shown to measure directly and rather generally the strength of the final-state Jahn-Teller coupling.Comment: 5 pages, 3 figure

Single-Photon Avalanche Diodes in a 0.16 μm BCD Technology With Sharp Timing Response and Red-Enhanced Sensitivity

CMOS single-photon avalanche diodes (SPADs) have recently become an emerging imaging technology for applications requiring high sensitivity and high frame-rate in the visible and near-infrared range. However, a higher photon detection efficiency (PDE), particularly in the 700-950 nm range, is highly desirable for many growing markets, such as eye-safe three-dimensional imaging (LIDAR). In this paper, we report the design and characterization of SPADs fabricated in a 0.16 mu m BCD (Bipolar-CMOS-DMOS) technology. The overall detection performance is among the best reported in the literature: 1) PDE of 60% at 500 nm wavelength and still 12% at 800 nm; 2) very low dark count rate of < 0.2 cps/mu m(2) (in counts per second per unit area); 3) < 1% afterpulsing probability with 50 ns dead-time; and 4) temporal response with 30 ps full width at half-maximum and less than 50 ps diffusion tail time constant

0.16 µm–BCD silicon photomultipliers with sharp timing response and reduced correlated noise

Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of any additional electronics, e.g., on-chip readout and analog (or digital) processing circuitry. In this paper, we present the design and characterization of two microelectronics-compatible SiPMs fabricated in a 0.16 µm–BCD (Bipolar-CMOS-DMOS) technology, with 0.67 mm × 0.67 mm total area, 10 × 10 square pixels and 53% fill-factor (FF). The photon detection efficiency (PDE) surpasses 33% (FF included), with a dark-count rate (DCR) of 330 kcps. Although DCR density is worse than that of state-of-the-art SiPMs, the proposed fabrication technology enables the development of cost-effective systems-on-chip (SoC) based on SiPM detectors. Furthermore, correlated noise components, i.e., afterpulsing and optical crosstalk, and photon timing response are comparable to those of best-in-class commercial SiPMs